SI1058X-T1-GE3【PDF 1/8 页】MOSFET N-CH 20V SC89

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Sheet目录507

[1页]2页 3页 4页 5页

Si1058X

Vishay Siliconix

N-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

? TrenchFET ? Power MOSFET

V DS (V)

R DS(on) ( ? )

0.091 at V GS = 4.5 V

0.124 at V GS = 2.5 V

I D (A)

1.3 a

1.1

Q g (Typ.)

3.5

? 100 % R g and UIS Tested

? Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

? Load Switch for Portable Devices

SC- 8 9 (6-LEADS)

Markin g Code

W L

Lot Tracea b ility

and Date Code

Part Nu m b er Code

Top V ie w

Orderin g Information: Si105 8 X-T1-GE3 (Lead (P b )-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V DS

V GS

Limit

± 12

Unit

Continuous Drain Current (T J = 150 °C) a

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipation a

Operating Junction and Storage Temperature Range

T A = 25 °C

T A = 70 °C

L = 0.1 mH

T A = 25 °C

T A = 70 °C

I D

I DM

I AS

E AS

I S

P D

T J , T stg

1.3 b, c

1.03 b, c

2.45

0.2 b, c

0.236 b, c

0.151 b, c

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient b, d

t ?? 5 s

Steady State

R thJA

440

540

530

650

°C/W

Notes:

a. Based on T C = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 650 °C/W.

Document Number: 73894

S12-1618-Rev. E, 09-Jul-12

For technical question, contact: pmostechsupport@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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